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| MITSUBISHI SEMICONDUCTOR MGFS48V2527 2.5 - 2.7GHz BAND 60W GaAs FET DESCRIPTION The MGFS48V2527 is a 60W push-pull type GaAs Power FET especially designed for use in 2.5 - 2.7GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. r H OUTLINE r H FEATURES Push-pull configuration High output power Pout = 60W (TYP.) @ f=2.5 - 2.7 GHz High power gain GLP = 10 dB (TYP.) @ f=2.5 - 2.7GHz High power added efficiency P.A.E. = 45 % (TYP.) @ f=2.5 - 2.7GHz r r r r QUALITY GRADE IG r ICVG UQWTEG FTCKP RECOMMENDED BIAS CONDITIONS VDS = 12 (V) ID = 4.0 (A) RG=20 (ohm) for each gate 2.5-2.7GHz band power amplifier r APPLICATION WPKVOO ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO PT *1 Tch Tstg Parameter Gate to drain voltage Gate to source voltage Total power dissipation Channel temperature Storage temperature (Ta=25deg.C) Ratings -20 -10 107.1 175 -65 / +175 Unit V V W deg.C deg.C < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. *1 : Tc=25deg.C ELECTRICAL CHARACTERISTICS Symbol VGS(off) P2dB GLP ID(RF) P.A.E. Rth (Ch-C) Parameter Cut-off voltage Output power at 2dB gain compression Linear power gain Drain current Power added efficiency Thermal resistance (Ta=25deg.C) Test conditions Min. VDS = 3V , ID = 17.3mA -1 47 VDS=12V, ID(RF off)=4.0A, f=2.5 - 2.7GHz 9 Channel to Case Limits Typ. Max. 48 10 11 45 1.0 -4 15 1.4 Unit V dBm dB A % deg.C/W MITSUBISHI ELECTRIC (1/6) June-'04 MGFS48V2527 OUTPUT POWER & POWER ADDED EFFICIENCY vs. INPUT POWER TEST CONDITIONS : Ids(RFoff)=4A f=2.5GHz 50 Vds=12V 45 OUTPUT POWER(dBm) 40 Vds=10V 70 POWER ADDED EFFICIENCY(%) OUTPUT POWER(dBm) 60 45 40 35 30 25 20 15 10 10 15 20 25 30 35 40 INPUT POWER(dBm) 45 80 50 Vds=12V Vds=10V 70 POWER ADDED EFFICIENCY(%) OUTPUT POWER(dBm) 60 50 40 30 20 10 0 45 40 f=2.6GHz 80 f=2.7GHz Vds=12V Vds=10V 70 60 POWER ADDED EFFICIENCY(%) 50 80 Pout 35 30 25 20 15 10 10 15 20 25 30 35 40 INPUT POWER(dBm) 45 50 40 30 20 10 0 Pout Pout 35 30 25 20 15 10 10 15 20 25 30 35 40 INPUT POWER(dBm) 45 50 40 30 20 10 0 PAE PAE PAE MITSUBISHI ELECTRIC CORPORATION June-'04 (2/6) MGFS48V2527 IMD vs. OUTPUT POWER TEST CONDITIONS : VDS=12V,ID(RF off)=4.0A 2-tone test , f=5MHz -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 f=2.6GHz -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 f=2.7GHz -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 f=2.5GHz IM3 IM3 IM3 IMD(dBc) IMD(dBc) IM5 IM5 IMD(dBc) IM5 28 30 32 34 36 38 40 42 44 46 OUTPUT POWER(2tone)(dBm) 28 30 32 34 36 38 40 42 44 46 OUTPUT POWER(2tone)(dBm) 28 30 32 34 36 38 40 42 44 46 OUTPUT POWER(2tone)(dBm) MITSUBISHI ELECTRIC CORPORATION June-'04 (3/6) MGFS48V2527 TEST CIRCUIT MGFS48V2527 VG C5 R1 C1 C2 C3 C4 C6 VD C7 C11 R3 C13 C19 C14 C15 C10 C21 C22 C23 C24 C25 C26 OUTPUT INPUT C9 C8 R2 VG C16 C20 C17 C18 C12 R4 VD Board material:Tefron thickness=0.6mm Specific dielectric constant=2.6 C1,C2,C3,C4 :8pF(GR708) C5,C6 :1000pF(GR40) C7,C8 :20pF(GR40) C9 :1.5pF(GR111) C10 :1pF(GR111) C11,C12 :20pF(GR40) C13,C14,C15 :4.7EF(CM32B475K) C16,C17,C18 :4.7EF(CM32B475K) C19,C20 :1000pF(GR40) C21,C22,C23,C24,C25,C26 :13pF(GR708) R1,R2 :20ohm R3,R4 :51ohm MITSUBISHI ELECTRIC CORPORATION June-'04 (4/6) MGFS48V2527 TEST CONDITIONS : f=2.0-3.0GHz,VDS=12V,ID=2.0A S11,S22 Smith Chart Z=50 1.0 2.0 4.0 5.0 3.0 2.0 0.0 0.2 0.5 1.0 2.0 5.0 SCALE FOR|S12| 0 -0.2 0.01 0.02 -0.5 -1.0 -2.0 0.03 0.04 1.0 SCALE FOR |S21| S11 S22 S21,S12 Polar Chart S21 5.0 S12 0.2 -5.0 S PARAMETERS (Ta=25deg.C,VDS=12V,ID=2.0A) f (GHz) 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 Mag. 0.343 0.311 0.301 0.318 0.354 0.399 0.452 0.484 0.512 0.529 0.523 0.504 0.460 0.369 0.231 0.074 0.188 0.395 0.569 0.694 0.773 S11 Ang(deg.) 30.9 11.3 -13.6 -37.2 -57.5 -78.1 -94.0 -107.7 -121.8 -134.1 -145.4 -159.0 -171.7 171.2 149.6 85.3 -26.1 -53.1 -72.1 -88.0 -99.3 Mag. 2.394 2.448 2.529 2.575 2.594 2.620 2.597 2.603 2.558 2.569 2.573 2.629 2.665 2.734 2.731 2.623 2.380 2.085 1.730 1.389 1.108 S Parameters (TYP.) S21 S12 Ang(deg.) Mag. Ang(deg.) -124.1 0.042 -112.1 -135.3 0.042 -129.0 -147.0 0.046 -134.8 -159.1 0.042 -148.3 -170.4 0.044 -160.2 176.5 0.045 -167.5 164.9 0.039 176.5 153.3 0.042 164.3 141.8 0.040 161.2 130.9 0.037 147.6 119.6 0.039 135.6 106.5 0.032 121.1 92.9 0.034 100.6 78.3 0.030 78.4 59.9 0.027 58.1 41.6 0.022 31.9 22.2 0.014 -3.2 4.0 0.014 -39.0 -13.8 0.018 -60.5 -28.6 0.016 -111.6 -40.4 0.015 -136.5 Mag. 0.773 0.760 0.746 0.724 0.700 0.690 0.673 0.659 0.655 0.649 0.629 0.636 0.636 0.645 0.666 0.695 0.740 0.781 0.818 0.844 0.862 S22 Ang(deg.) 164.4 163.0 163.3 162.9 163.5 164.1 165.6 166.6 167.8 169.7 170.7 172.5 175.1 177.6 -179.9 -177.4 -177.1 -177.8 -179.5 178.8 176.7 This S-Parameter data show measurements performed on each single-ended FET. MITSUBISHI ELECTRIC CORPORATION June-'04 (5/6) MITSUBISHI SEMICONDUCTOR MGFS48V2527 2.5 - 2.7GHz BAND 60W GaAs FET MITSUBISHI ELECTRIC (6/6) June-'04 |
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